Asri, R. I. M and Hamzah, N. A and Ahmad, M. A. and Alias, E. A. and Sahar, M. M. and Abdullah, M.
(2020)
Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes.
In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.
Abstract
InGaN/GaN blue light-emitting diodes (LEDs) have been successfully growth via metal organic chemical vapor deposition (MOCVD) in temperature range 920 to
1020 °C growth temperatures for p-GaN layer. The significant of p-GaN growth temperature are studied in detail according to the electrical, optical, and structural performances of InGaN/GaN multiple-quantum-well (MQW) blue LEDs. From experimental analysis,
decrement growth temperature of p-GaN layer shows improvement trends in term of output power values and turn on voltage values. The optical and structural properties of InGaN/GaN MQW blue LEDs structure were enhanced based on the decrement of photoluminescence
(PL) intensity with increasing growth temperature of the p-GaN layer. This study yields an optimized p-GaN layer growth temperature for understanding highly efficient InGaN/GaN blue LED devices.
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