Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method

Hamid, Maizatul Akmam Ab and Ng, Sha Shiong and Hassan, Zainuriah (2020) Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.

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Abstract

In this paper, the effects of different annealing growth conditions on the structural, surface morphology and optical properties of the grown β-Ga2O3 thin films on p- Si(100) substrates via sol-gel dip coating were reported. Field-emission scanning electron microscopy observations shows uniform and densely packed grains as well as decreasing pinholes are formed at annealing temperatures of 900⁰C. As the annealing temperatures increase from 700⁰C to 1200⁰C, the crystallinity of the β-Ga2O3 (400) peak at 900⁰C shows improved quality as well as increases crystallite size, D and decreasing FWHM value. The root-mean-square (rms) surface roughness of the deposited β-Ga2O3 thin films increases from 0.479 nm to 91.0 nm when annealing temperature increased from 700⁰C to 1200⁰C and exhibits nanocrystalline structure at 900⁰C. FTIR measurements demonstrated that the reflectivity spectra of β-Ga2O3 thin films increases from 700⁰C and diminishes above 1000⁰C. Finally, all the results revealed that 900⁰C in air ambient was the best annealing growth conditions to deposit β-Ga2O3 thin film and have high potential for deep UV photodetector applications.

Item Type: Conference or Workshop Item (Paper)
Subjects: Q Science > QC Physics > QC1-999 Physics
Divisions: Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelectronics Research and Technology (INOR)) > Conference or Workshop Item
Depositing User: Mr Aizat Asmawi Abdul Rahim
Date Deposited: 04 May 2021 03:41
Last Modified: 04 May 2021 03:41
URI: http://eprints.usm.my/id/eprint/49090

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