Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer

Yusuf, Yusnizam and Wee, Kie Tang and Taib, Muhamad Ikram Md and Zainal, Norzaini (2020) Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.

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Abstract

This work will describe the influence of molarity and time of potassium hydroxide etching on Al-rich AlGaN layer. With potassium hydroxide (KOH) molarity of 5 mol/L, no significant change on the pores formation was observed for 5 and 10 minutes of etching. Nonetheless, there was a possibilty that some of the Ga atoms were eliminated for 10 minutes of etching, resulting in co-existance of AlGaN material with higher Al content. Similar behaviour was also witnessed in the case for 10 mol/L of KOH with 5 and 10 minutes of etching. Nonetheless, well-defined hexagonal patterns were only formed when the etching was conducted using 10 mol/L of KOH for 10 minutes. Such patterns have the potential to increase light extraction efficiency of UV LEDs.

Item Type: Conference or Workshop Item (Paper)
Subjects: Q Science > QC Physics > QC1-999 Physics
Divisions: Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelectronics Research and Technology (INOR)) > Conference or Workshop Item
Depositing User: Mr Aizat Asmawi Abdul Rahim
Date Deposited: 30 Apr 2021 02:12
Last Modified: 30 Apr 2021 02:12
URI: http://eprints.usm.my/id/eprint/49066

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