Yusof, Ahmad Sauffi and Hassan, Zainuriah and Hamady, Sidi and Ng, Sha Shiong and Ahmad, Mohd Anas and Way, Foong Lim and Fressengeas, Nicolas and Chevallier, Christyves
(2020)
The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures.
In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.
Abstract
This work presents the effect of growth temperature on the evolution of indium incorporation and growth process of InGaN/GaN heterostructures grown using Taiyo
Nippon Sanso Corporation (TNSC) metal organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epitaxially grown on 3.8 μm and
40 nm thick undoped-GaN (ud-GaN) and GaN nucleation layer respectively over a commercial 2” c-plane flat sapphire substrate (FSS). The InGaN layers were grown at different temperature setting ranging from 860°C to 820°C in a step of 20°C. The details structural, surface morphology and optical properties were investigated using X-ray
diffraction (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrophotometer respectively.
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