Tan, A. L. and Ng, Sha Shiong and Hassan, H. Abu (2018) Influence of sulfurization temperature on the growth of MoS2 thin films. In: 6th International Conference on Recent Advances in Materials, Minerals and Environment 2018 (RAMM 2018).
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Abstract
In this work, molybdenum disulfide (MoS2) thin film was successfully deposited by using thermal vapour sulfurization method with spin coating as pre-deposition technique. The availability of solvent for dissolution process of molybdenum (Mo) and sulfur (S) sources is rare. Single source precursor (SSP) was the common starting source for the preparation of precursor solution. However, hazardous solvent was required to dissolve the SSP. An alternative, dual source precursor (DSP) approach, was applied in this study. Thereafter, sulfurization process was imposed as to transform the deposited MoS-based films to MoS2 thin films. Carbon disulfide was used as the sulfurization source due to the lower decomposition rate as compared to conventional S powder. The homogeneity and compactness of MoS2 were improved when sulfurization temperature increases. Yet, rod-like feature was observed at much higher temperature. Next, the absorption features of MoS2 were detected at 667 nm, 617 nm and 447 nm. Resonant Raman spectroscopy showed the multiphonon and second order vibrational modes of MoS2. Also, multilayers of MoS2 was estimated by frequency difference of E1 2g(Γ) and A1g(Γ) modes. This observation was further confirm by the high resolution transmission electron microscopy.
| Item Type: | Conference or Workshop Item (Paper) |
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| Subjects: | Q Science > QC Physics > QC1-999 Physics |
| Divisions: | Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelectronics Research and Technology (INOR)) > Conference or Workshop Item Pusat Pengajian Sains Fizik (School of Physics) > Conference or Workshop Item |
| Depositing User: | Mr Aizat Asmawi Abdul Rahim |
| Date Deposited: | 22 Apr 2021 07:17 |
| Last Modified: | 22 Apr 2021 07:17 |
| URI: | http://eprints.usm.my/id/eprint/48998 |
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