Hamid, Maizatul Akmam Ab and Sha, Shiong Ng and Hassan, Zainuriah
(2020)
Effects Of Annealing Growth Conditions Of β-Β-Ga2O3 Thin Films For Solar Blind Uv Photodetectors By Using Sol-Gel Dip Coating Method.
In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020).
Abstract
In this paper, the effects of different annealing growth conditions on the structural, surface morphology and optical properties of the grown β-Ga2O3 thin films on pSi(100) substrates via sol-gel dip coating were reported. Field-emission scanning electron microscopy observations shows uniform and densely packed grains as well as decreasing pinholes are formed at annealing temperatures of 900⁰C. As the annealing temperatures increase from 700⁰C to 1200⁰C, the crystallinity of the β-Ga2O3 (400) peak at 900⁰C shows improved quality as well as increases crystallite size, D and decreasing FWHM value. The root-mean-square (rms) surface roughness of the deposited β-Ga2O3 thin films increases from 0.479 nm to 91.0 nm when annealing temperature increased from 700⁰C to 1200⁰C and exhibits nanocrystalline structure at 900⁰C. FTIR measurements demonstrated that the reflectivity spectra of β-Ga2O3 thin films increases from 700⁰C and diminishes above 1000⁰C. Finally, all the results revealed that 900⁰C in air ambient was the best annealing growth conditions to deposit β-Ga2O3 thin film and have high potential for deep UV photodetector applications.
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