Thin Film Undoped And P-Doped GaN As Sensor

Nashaain, N.M. and Syamsul, M. and Abdalmohammed, S. A. A. and Nor, M. Nuzaihan M. (2020) Thin Film Undoped And P-Doped GaN As Sensor. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020).

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Abstract

A GaN thin film based sensor is demonstrated for sensing detection. The GaN thin film was grown on a sapphire substrate by using Metal Organic Chemical Vapour Deposition (MOCVD). An undoped and p-doped GaN thin film were used to investigate their reaction upon exposure. The interaction between the GaN surface and molecules, and the sensing mechanism were inspected. It was found that the electrical resistance of semiconducting GaN thin film decreases as time increases. The Undoped GaN (U1) demonstrates good sensitivity, stability and low resistivity by increasing time compare to other samples.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	Q Science > QC Physics > QC1-999 Physics
Divisions:	Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelectronics Research and Technology (INOR)) > Conference or Workshop Item
Depositing User:	Mr Aizat Asmawi Abdul Rahim
Date Deposited:	19 Apr 2021 02:59
Last Modified:	19 Apr 2021 02:59
URI:	http://eprints.usm.my/id/eprint/48921

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