Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN

Ibrahim, N. and Ikram Md Taib, M. and Waheeda, S. N. and Alias, E. A. and Zainal, N. (2019) Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN. In: International Conference On Semiconductor Materials Technology.

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Abstract

Poor light extraction due to total internal reflection (TIR) phenomenon has become a major problem in InGaN/GaN light-emitting diode (LED) [1-2]. Surface texturing by photoelectrochemical (PEC) etching gives access to more than 70% improvement in light extraction as reported in [3]. In this work, an electrode-less photo-assisted etching is demonstrated on Ga-polar face of n-type and p-type GaN layers. Two type of etchant solutions, H3PO4 with KOH and H3PO4 with HNO3 were used and the surface morphology of all samples were measured using scanning electron microscopy (SEM). Hexagonal pit on the surface of all samples were observed. Interestingly, the pits were formed in various uniformity, density and size depending on the type of solution. Surface roughness of etch samples is improved after etching as measured using atomic force microscopy (AFM).

Item Type: Conference or Workshop Item (Paper)
Subjects: Q Science > QC Physics > QC1-999 Physics
Divisions: Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelectronics Research and Technology (INOR)) > Conference or Workshop Item
Depositing User: Mr Aizat Asmawi Abdul Rahim
Date Deposited: 15 Apr 2021 07:29
Last Modified: 15 Apr 2021 07:29
URI: http://eprints.usm.my/id/eprint/48905

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