Efficiency Droop Of InGaN/GaN Led With Different Indium Composition

Samsudin, M. E. A. and Alias, E. A. and Iza, M. and Speck, J. S. and Denbaars, S. P. and Nakamura, S. and Zainal, N. (2019) Efficiency Droop Of InGaN/GaN Led With Different Indium Composition. In: International Conference On Semiconductor Materials Technology.

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Abstract

III-nitride light emitting diodes (LEDs) have attracted considerable attraction due to their various applications in displays and illumination lighting. Nevertheless, the majority of InGaN/GaN LEDs suffer from the efficiency droop. This droop would limit the potential of the LEDs in high current applications. As widely reported, high indium content in InGaN/GaN multiquantum well active region of the LED promotes indium fluctuation that degrades the efficiency of the LED. In this work, we will present results of the efficiency droop for InGaN/GaN LED with indium content of 18% and 8%, respectively. The efficiency droop of the LED with 18% of indium shows higher efficiency droop than the LED with 8% of indium content.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	Q Science > QC Physics > QC1-999 Physics
Divisions:	Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelectronics Research and Technology (INOR)) > Conference or Workshop Item
Depositing User:	Mr Aizat Asmawi Abdul Rahim
Date Deposited:	13 Apr 2021 03:53
Last Modified:	13 Apr 2021 03:53
URI:	http://eprints.usm.my/id/eprint/48863

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