Effect of Different UV Light Intensity on Porous Silicon Fabricated by Using Alternating Current photo-assisted Electrochemical Etching (ACPEC) Technique

Sohimee, Siti Nurfarhana and Hassan, Zainuriah and Ahmed, Naser Mahmoud and Lim, Way Foong and Quah, Hock Jin (2017) Effect of Different UV Light Intensity on Porous Silicon Fabricated by Using Alternating Current photo-assisted Electrochemical Etching (ACPEC) Technique. In: The International Conference of Solid State Science and Technology (ICSSST ), 13–16 November 2017, Penang, Malaysia.

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Abstract

Alternating current photo-assisted electrochemical etching (ACPEC) process was used to produce the formation of porous silicon with different ultra-violet(UV) light intensity. The study aims to investigate the effect of different UV light illumination on the properties of porous silicon. The surface of n-type silicon (111) was selectively etched in the HF and ethanol solution with ratio (5:20) for 30 minutes under different UV lamp intensity; 40%, 50% and 60%. The samples were characterized by using field emission scanning electron microscope (FESEM), atomic force microscopy (AFM) and high resolution X-ray diffraction (HR-XRD).

Item Type:	Conference or Workshop Item (Paper)
Subjects:	Q Science > QC Physics > QC1-999 Physics
Divisions:	Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelectronics Research and Technology (INOR)) > Conference or Workshop Item
Depositing User:	Mr Aizat Asmawi Abdul Rahim
Date Deposited:	09 Apr 2021 02:42
Last Modified:	09 Apr 2021 02:47
URI:	http://eprints.usm.my/id/eprint/48823

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