Fabrication and Characterization of Copper Doped Zinc Oxide on p-type and ntype Gallium Nitride by Sputtering

Yusof, Ahmad Sauffi and Hassan, Zainuriah and Zainal, Norzaini (2016) Fabrication and Characterization of Copper Doped Zinc Oxide on p-type and ntype Gallium Nitride by Sputtering. In: 3rd Meeting of Malaysia Nitrides Research Group (MNRG 2016).

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Abstract

Zinc oxide (ZnO) is a wide band gap semiconductor (3.3 7ev) with promising appli cations in optoelectroni c devices and flat panel display. Copper (Cu) doping changes the properti es of ZnO. Pure and Cu doped ZnO (CZO) were deposited on p-type and 11-type ga llium nitride (GaN) using radio fi·equency (RF) magnetron sputtering of Cu!ZnO alloy target with ratio I 0/90 at room temperature. The effect of different deposition thickness of the thin film on the crysta l structure, surface morphology and surface roughnesswere investigated intensively using X-ray diffraction (XRD), field em ission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDX) andatomic force microscopy (AFM)respectively. Results indicate th at the films with hexago nal wurtzite structure and preferential c ax is orientation were fabricated. Crystalli zation of thin film is dependent on the deposition thickness. As the thickness of the film increases, the grain size increases and surface roughness decreases.

Item Type: Conference or Workshop Item (Paper)
Subjects: Q Science > QC Physics > QC1-999 Physics
Divisions: Pusat Pengajian Sains Fizik (School of Physics) > Conference or Workshop Item
Depositing User: Mr Aizat Asmawi Abdul Rahim
Date Deposited: 08 Apr 2021 00:52
Last Modified: 08 Apr 2021 00:52
URI: http://eprints.usm.my/id/eprint/48797

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