Near Ultra-Violet Electroluminescence from a ZnO Nanorods/p-GaN Heterojunction Light Emitting Diode

Mohammad, Sabah M. and Hassan, Z. and Ahmed, Naser M. (2016) Near Ultra-Violet Electroluminescence from a ZnO Nanorods/p-GaN Heterojunction Light Emitting Diode. In: 3rd Meeting of Malaysia Nitrides Research Group (MNRG 2016).

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Abstract

The heterostructure of the n-ZnO nanorod (NRs) arrays grown on the p-GaN layer was formed using lowcost hydrothermal technique in order to fabricate a light emitting diode (LED) device. Morphological, structural and optica l properties of as-prepared sample are described. The LED exhibited room temperature current-voltage (1-V) characteristics confirming a rectifying diode behaviour. The device presents near ultra-violet (UV) color under reverse bias. The electroluminescence (EL) spectrum of color emitting LED composed of intense peaks centered at 378 nm and 367 nm. The electroluminescence mechanism of the heterojunction LED was discussed in terms of band diagram.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	Q Science > QC Physics > QC1-999 Physics
Divisions:	Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelectronics Research and Technology (INOR)) > Conference or Workshop Item
Depositing User:	Mr Aizat Asmawi Abdul Rahim
Date Deposited:	07 Apr 2021 08:12
Last Modified:	07 Apr 2021 08:12
URI:	http://eprints.usm.my/id/eprint/48796

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