Bashir, Umar and Hassan, Zainuriah and Ahmed, Naser M.
(2016)
Influence of Annealing Temperature on InN Thin Films Grown by RF Magnetron Sputtering.
In: 3rd Meeting of Malaysia Nitrides Research Group (MNRG 2016).
Abstract
This paper presents the study and characterization of indium nitride (InN) films grown on quartz glass
and p-Si (111) substrates by RF magnetron sputtering method using pure indium target in argon (Ar) and
nitrogen (N 2) environment. The characterization was carried out by high resolution X-ray diffraction
(HRXRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM) and
energy dispersive X-ray spectroscopy (EDX). XRD results show the growth of polycrystalline wurtzite
films with varying peak intensities. The deposited films were annealed in nitrogen environment at
different temperatures ranging from 1 00°C to 400°C. The annealing was carried out for four hours and
the results were compared with pre-annealing samples.
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