Alvin, Y. S. M. and Zainal, N. and Hassan, Z.
(2015)
Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator.
In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015).
Abstract
In this work, the growth of scandium nitride (SeN) on gallium arsenide (GaAs) substrate is
demonstrated using electron beam (e-beam) evaporator with successive annealing in ammonia (NHJ)
ambient. As observed in field effect scanning electron microscopy (FE-SEM), the surface morphology
of the SeN layer was started to transform from rice grains-like structure to rock salt grains-like
structure by increasing the temperature from 750 oc to 900 °C. The rock salt grains-like structure is
similar to high quality SeN, as reported in literature. However, the surface degraded with the presence
of voids at 980 °C. The existence of SeN bond was confirmed by x-ray photospectroscopy (XPS)
measurement. The photoluminescence (PL) of near-to-band-edge SeN peak was observed in all
samples. Furthermore, the SeN peaks in Raman spectrum were obvious when the sample was
annealed above 850 °C. Based on the evidences, the growth of SeN using the above techniques was
successful, with the annealing temperature above 850 °C.
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