Waheeda, S. N. and Zainal, N. and Hassan, Z. and Powell, R. E. L. and Akimov, A. V. and Kent, A. J.
(2015)
Properties of Strain in GaN Layer Grown on Si (100) Substrate and Its Porous Structure.
In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015).
Abstract
We report an investigation of strain effects in GaN layer grown on a Si (100) substrate. From
temperature dependent PL measurements, it was found that the strain may influence the value of the
binding energy of donors and acceptors in the GaN layer. Estimation based on Raman spectroscopy
measurements showed that the stress level in the GaN layer about 0.07 GPa. The coherency of the
GaN layer was confirmed through reciprocal space mapping (RSM) measurement. Next, a series of xray
diffraction (XRD) measurements revealed that the strain level in the GaN layer was around 0.0216
and -0.0241, along the c-axis and a-axis, respectively. In an attempt to minimize the strain effect, few
micrometers of the GaN layer was fabricated into a porous structure with two types of preparation; 1)
without annealing treatment and 2) with the annealing treatment at 800 °C prior to the etching. Our
observations showed that the porous samples have smaller strain level, especially for the porous
GaN/GaN sample with the annealing treatment. With proper etching conditions, better porous GaN
sample can be produced to serve as a template for 'sinking' more strain and defects from overgrown
layers.
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