Mohammad, Sabah M. and Hassan, Z. and Ahmed, Naser M.
(2015)
Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method.
In: Meeting of Malaysia Nitrides Research Group.
Abstract
Wide band gap semiconductors like GaN and ZnO have high electron mobility and wide band gap energy. Zinc oxide (ZnO)nanorod arrays are grown on a seed-layer ZnO/GaN l sapphire substrate using a wet chemical bath deposition method. Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnOnanorods on a GaN substrate. Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) measurements were used to examine the morphology, phase growth orientation and the structure of the ZnOnanorods and the GaN thin film. Optical property of the as-grown ZnOnanorodsand the GaN thin film was analyzed by room temperature photoluminescence measurements. The synthesis of vertically well-aligned nZnOnanorods on p-GaN film with large aspect ratio, high optical quality, and high density can be very useful for fabricating nanoelectronic and nano-optical devices.
Actions (login required)
 |
View Item |
