Wet etching of GgAs for lateral PIN photodiode

Ahmad, Mohd Hairul Faizal and Shaari, Sahbudin (2004) Wet etching of GgAs for lateral PIN photodiode. In: The 4th Annual Seminar of National Science Fellowship NSF 2004 Proceedings. Penerbit Universiti Sains Malaysia, Pulau Pinang, Malaysia, pp. 456-458.

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Photodiode play important roles in optical communication systems nowadays. In this field, fiber optic cable is used as an information signal transmission medium between the light sources, sensors and photodiode. Many materials can provided to make the photodiode substrate in order to produce the detector to be used in application that require higher bandwidth and long distance transmission. Therefore, the optical receiver for long-distance telecommunication has primarily been implemented in III-V materials like GaAs or InGaAs in order to achieve the highest possible performance.

Item Type: Book Section
Subjects: Q Science > Q Science (General) > Q179.9-180 Research
Divisions: Koleksi Penganjuran Persidangan (Conference Collection) > Annual Seminar National Science Fellowship (NSF)
Depositing User: Puan Sukmawati Muhamad
Date Deposited: 19 Feb 2019 02:32
Last Modified: 19 Feb 2019 02:32
URI: http://eprints.usm.my/id/eprint/43386

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