Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors

Sarmast, Hadi Mahmodi Sheikh (2010) Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors. Masters thesis, Universiti Sains Malaysia.

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Abstract

In this thesis, experimental fabrication and theoretical simulation of Ge islands Si based metal-semiconductor-metal photodetectors have been reported. Radio frequency sputtering was used to deposit Ge thin films on silicon substrates. This is followed by rapid thermal annealing to form Ge islands. Not only that the annealing produces Ge islands but also wetting layer. The size and density of the islands are greatly influenced by the annealing time.

Item Type: Thesis (Masters)
Subjects: Q Science > QC Physics > QC1 Physics (General)
Divisions: Pusat Pengajian Sains Fizik (School of Physics) > Thesis
Depositing User: ASM Ab Shukor Mustapa
Date Deposited: 12 Sep 2018 01:48
Last Modified: 12 Apr 2019 05:26
URI: http://eprints.usm.my/id/eprint/41822

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