A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices

Hussein, Asaad Shakir (2011) A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices. PhD thesis, Universiti Sains Malaysia.

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Abstract

This study examined AlxGa1-xN alloys grown on Si substrate for UVphotodetectors and transistors applications. Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. Undoped and n-type Si-doped samples of AlxGa1-xN with different Al-mole fractions were successfully grown. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD), photoluminescence (PL),

Item Type:	Thesis (PhD)
Subjects:	Q Science > QC Physics > QC1 Physics (General)
Divisions:	Pusat Pengajian Sains Fizik (School of Physics) > Thesis
Depositing User:	ASM Ab Shukor Mustapa
Date Deposited:	03 Sep 2018 02:06
Last Modified:	12 Apr 2019 05:26
URI:	http://eprints.usm.my/id/eprint/41621

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