Preparation and characterization of Nanostructured Porous Ternary and Quaternary Ill-Nitrides Alloys.

Hassan, Zainuriah (2016) Preparation and characterization of Nanostructured Porous Ternary and Quaternary Ill-Nitrides Alloys. Technical Report. Universiti Sains Malaysia.

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Abstract

Nanostructured porous binary, ternary and quaternary Ill-nitrides (lnGaN and lnAIGaN) have been successfully fabricated using low cost ultraviolet (UV)-assisted photo-electrochemical (PEC) etching routes. Direct current (DC) has been employed to provide additional driving force to accelerate the PEC etching process, in which an improvement in optical characteristics of the semiconductors with regards to photoluminescence intensity and a stress relaxation in optical phonon modes has been attained through the formation of nanostructures/pores on the semiconductor surface.

Item Type: Monograph (Technical Report)
Subjects: Q Science > QC Physics > QC1 Physics (General)
T Technology > TP Chemical Technology > TP1-1185 Chemical technology
Divisions: Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelectronics Research and Technology (INOR)) > Monograph
Depositing User: Mr Erwan Roslan
Date Deposited: 16 Oct 2017 12:51
Last Modified: 17 Oct 2017 09:35
URI: http://eprints.usm.my/id/eprint/37142

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