Fundamental analysis of semiconductor-metal transition in indium-doped zinc oxide using carrier concentration and current-voltage measurements.

Saw , Kim Guan (2017) Fundamental analysis of semiconductor-metal transition in indium-doped zinc oxide using carrier concentration and current-voltage measurements. Technical Report. Universiti Sains Malaysia.

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Abstract

Transparent conducting oxides in the form of metal-doped ZnO thin films have important applications in optoelectronic devices. In this work, In-doped ZnO thin films were synthesized by magnetron sputtering using targets with different wt% (1 - 7%) of In20~ at a substrate temperature of 150°C on quartz and Si substrates.

Item Type: Monograph (Technical Report)
Subjects: L Education > LC Special aspects of education > LC5800-5808 Distance education.
Divisions: Pusat Pengajian Pendidikan Jarak Jauh (School of Distance Education) > Monograph
Depositing User: Mr Erwan Roslan
Date Deposited: 16 Oct 2017 09:58
Last Modified: 16 Oct 2017 09:58
URI: http://eprints.usm.my/id/eprint/37128

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