Saw , Kim Guan (2017) Fundamental analysis of semiconductor-metal transition in indium-doped zinc oxide using carrier concentration and current-voltage measurements. Technical Report. Universiti Sains Malaysia.
Full text not available from this repository.Abstract
Transparent conducting oxides in the form of metal-doped ZnO thin films have important applications in optoelectronic devices. In this work, In-doped ZnO thin films were synthesized by magnetron sputtering using targets with different wt% (1 - 7%) of In20~ at a substrate temperature of 150°C on quartz and Si substrates.
| Item Type: | Monograph (Technical Report) |
|---|---|
| Subjects: | L Education > LC Special aspects of education > LC5800-5808 Distance education. |
| Divisions: | Pusat Pengajian Pendidikan Jarak Jauh (School of Distance Education) > Monograph |
| Depositing User: | Mr Erwan Roslan |
| Date Deposited: | 16 Oct 2017 01:58 |
| Last Modified: | 16 Oct 2017 01:58 |
| URI: | http://eprints.usm.my/id/eprint/37128 |
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