Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.

Zainal, Norzaini Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices. Project Report. Universiti Sains Malaysia. (Submitted)

Full text not available from this repository.

Abstract

Projek ini bermula dengan pembikinan struktur GaAs (100) berliang menggunakan larutan punaran H2S04: DMF dengan nisbah optimum 1 :3. Liang yang berbentuk bulat dengan keseragaman tinggi telah diperolehi berbanding dengan larutan punaran lain. Sam pel GaAs berliang tersebut sepatutnya digunakan untuk penumbahan GaN di atasnya menggunakan teknik MOCVD. This project was started with fabrication of porous GaAs (100) structure on GaAs (100) substrate using etching solution of H2S04: DMF with the optimum ratio of 1 :3. A well-defined circular shaped of porous GaAs was obtained with high uniformity, in comparison to other etching solutions. The porous GaAs sample was then used for growing GaN atop it using MOCVD technique.

Item Type: Monograph (Project Report)
Subjects: Q Science > QC Physics > QC1-999 Physics
Divisions: Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelectronics Research and Technology (INOR)) > Monograph
Depositing User: Mr Erwan Roslan
Date Deposited: 28 Mar 2017 08:58
Last Modified: 11 Aug 2017 09:35
URI: http://eprints.usm.my/id/eprint/32554

Actions (login required)

View Item
Share