Md Aznan, Nornani
(2016)
Effect Of Indium Doping On Structural, Optical And Electrical Properties Of Zinc Oxide Thin Films.
Masters thesis, Universiti Sains Malaysia.
Abstract
Konduktif oksida lutsinar (TCO) seperti filem nipis zink oksida (ZnO)
didopkan logam mempunyai aplikasi penting dalam peranti optoelektronik. Filem
nipis ZnO didopkan logam mempunyai kelebihan kerana mereka boleh difabrikasikan
dalam proses yang agak mudah dan menjimatkan. Walau bagaimanapun, ciri-ciri
tersebut adalah sensitif kepada jumlah logam pendopan di dalam hos bahan zink
oksida. Dalam kajian ini, kesan kandungan indium (In) dan juga suhu
penyepuhlindapan pada sifat-sifat struktur, optik dan elektrik ZnO disiasat. Melalui
percikan magnet frekuensi radio (RF) dari target ZnO / In2O3 tersinter dengan
kandungan In berbeza di antara 1-7 wt. %, filem nipis indium zink oksida (IZO) telah
berjaya ditumbuhkan ke atas substrat Si (100) dan substrat kaca yang telah dibersihkan
secara ultrasonik. Filem nipis IZO telah ditumbuhkan dalam persekitaran argon pada
suhu 150ºC dengan kuasa 100W. Selain daripada unsur-unsur zink (Zn) dan oksigen
(O), spektrum tenaga serakan sinar-X (EDX) juga mengesan unsur In daripada filem
nipis IZO, menunjukkan bahawa In telah berjaya diserapkan ke dalam hos bahan
(ZnO). Mikroskop imbasan elektron (SEM) menunjukkan bahawa filem-filem nipis
IZO mempunyai morfologi permukaan yang berterusan tanpa kehadiran zarah-zarah
asing. Filem nipis ZnO tanpa dop juga difabrikasikan melalui kondisi percikan yang
sama untuk perbandingan. Analisis pembelauan sinar-X (XRD) menunjukkan bahawa
filem nipis mempunyai kecenderungan orientasi di sepanjang satah (002).
Transparent conducting oxide (TCO) such as metal-doped zinc oxide (ZnO)
thin films have important applications in optoelectronic devices. Metal-doped ZnO
thin films have an advantage as they can be fabricated in a relatively simple and
economical process. However, their properties are sensitive to the amount of metal
doping in the zinc oxide host material. In this work, the effect of indium (In) content
as well as the annealing temperature on the structural, optical and electrical properties
of ZnO were investigated. The Indium-doped ZnO (IZO) thin films were successfully
deposited onto ultrasonically cleaned Si (100) and glass substrates by radio frequency
(RF) magnetron sputtering from sintered ZnO/In2O3 target with different In content
ranging from 1 to 7 wt. %. The IZO thin films were grown in argon environment at
150ºC with a bias power of 100W. Apart from zinc (Zn) and oxygen (O) elements, the
energy dispersive x-ray (EDX) spectra of the IZO thin films also detected In element,
indicating that In were successfully incorporated into the host material (ZnO). The
scanning electron microscopy (SEM) shows that the IZO thin films have a continuous
surface morphology without the presence of foreign particles. Un-doped ZnO films
were also fabricated under the same sputtering conditions for comparison. The X-ray
diffraction (XRD) analysis show that the thin films have preferential orientation along
(002) plane.
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