Pembentukan Dan Pencirian Kobalt Silisida Atas Wafer Silikon (111) Pada Suhu Substrat Dan Sepuh Lindap Yang Berbeza-Beza

Abdul Hamid, Noorhisyam (2005) Pembentukan Dan Pencirian Kobalt Silisida Atas Wafer Silikon (111) Pada Suhu Substrat Dan Sepuh Lindap Yang Berbeza-Beza. Masters thesis, USM.

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Abstract

Silisida logam pada masa sekarang telah digunakan secara meluas dalam litar bersepadu berskala besar sebagai penghubung, sawar Schottky Metal silicides are extensively used in very large scale integrated circuit device processing as interconnects, Schottky barriers

Item Type: Thesis (Masters)
Subjects: Q Science > Q Science (General)
Divisions: Pusat Pengajian Sains Kimia (School of Chemistry) > Thesis
Depositing User: Mr Firdaus Mohamad
Date Deposited: 23 Jul 2015 07:57
Last Modified: 12 Apr 2017 03:23
URI: http://eprints.usm.my/id/eprint/29184

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