Development Of N-Type Spin-On Dopant For Silicon Devices

Ahmad Kamil, Suraya (2009) Development Of N-Type Spin-On Dopant For Silicon Devices. Masters thesis, Universiti Sains Malaysia.

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Abstract

In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaan pendopan putaran jenis n (SOD) menggunakan teknologi sol-gel. Tujuan utama penyelidikan ini adalah untuk menyediakan SOD dengan kepekatan pendopan di antara 1016 kepada 1020 sm-3.

Item Type:	Thesis (Masters)
Subjects:	Q Science > QC Physics > QC1-999 Physics
Divisions:	Pusat Pengajian Sains Fizik (School of Physics) > Thesis
Depositing User:	Administrator Automasi
Date Deposited:	16 Jun 2015 06:40
Last Modified:	22 Mar 2017 02:23
URI:	http://eprints.usm.my/id/eprint/29136

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