PA-MBE GaN-BASED OPTOELECTRONICS ON SILICON SUBSTRATES[QC1].

CHUAH, LEE SIANG (2009) PA-MBE GaN-BASED OPTOELECTRONICS ON SILICON SUBSTRATES[QC1]. PhD thesis, Universiti Sains Malaysia.

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    Abstract

    Dalam penyelidikan ini, epitaksi alur molekul berbantukan plasma nitrogen frekuensi radio (RF) digunakan untuk menumbuhkan bahan galium nitrid (GaN) di atas substrat Si(111) dengan penggunaan aluminium nitrid (AlN) yang ditumbuhkan pada suhu tinggi sebagai lapisan penimbal. In this project, radio-frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow GaN-based layers on Si(111) substrate using high temperature grown AlN as buffer layer.

    Item Type: Thesis (PhD)
    Subjects: Q Science > QC Physics > QC1 Physics (General)
    Divisions: Pusat Pengajian Sains Fizik (School of Physics)
    Depositing User: Mr Erwan Roslan
    Date Deposited: 22 Dec 2009 13:58
    Last Modified: 13 Jul 2013 14:00
    URI: http://eprints.usm.my/id/eprint/15595

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