Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997].

Tedi, Kurniawan (2009) Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997]. Masters thesis, Universiti Sains Malaysia.

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    Abstract

    Lapisan nipis ZrO2 untuk aplikasi get dielektrik telah dibentuk di atas substrat Si dan SiC dengan menggunakan kombinasi proses pemercitan logam dan pengoksidaan haba. ZrO2 thin films for gate dielectric application has been formed on Si and SiC substrates using a combination of metal sputtering and thermal oxidation process.

    Item Type: Thesis (Masters)
    Subjects: T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
    Divisions: Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral (School of Material & Mineral Resource Engineering)
    Depositing User: MHAH Hazlee Abdul Halil
    Date Deposited: 16 Dec 2009 12:15
    Last Modified: 13 Jul 2013 13:59
    URI: http://eprints.usm.my/id/eprint/15537

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