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Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997].

Tedi, Kurniawan (2009) Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997]. Masters thesis, Universiti Sains Malaysia.

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Abstract

Lapisan nipis ZrO2 untuk aplikasi get dielektrik telah dibentuk di atas substrat Si dan SiC dengan menggunakan kombinasi proses pemercitan logam dan pengoksidaan haba. ZrO2 thin films for gate dielectric application has been formed on Si and SiC substrates using a combination of metal sputtering and thermal oxidation process.

Item Type:Thesis (Masters)
Subjects:T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
ID Code:15537
Deposited By:MHAH Hazlee Abdul Halil
Deposited On:16 Dec 2009 12:15
Last Modified:30 Apr 2012 12:41

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