Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.

Thahab, S M and Abu Hassan, H. and Hassan, Z. (2007) Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur.

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Abstract

Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) was simulated by using ISETCAD software with varying substrate type, gate length and source drain resistances.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	Q Science > QC Physics > QC1 Physics (General)
Divisions:	Pusat Pengajian Sains Fizik (School of Physics)
Depositing User:	Mr Erwan Roslan
Date Deposited:	20 Nov 2009 03:13
Last Modified:	13 Jul 2013 05:45
URI:	http://eprints.usm.my/id/eprint/14835

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