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Effects Of Thermal Annealing Of Pt Schottky Contacts On n-GaN.

C, W Chin and Hassan, Z and F, K Yam (2007) Effects Of Thermal Annealing Of Pt Schottky Contacts On n-GaN. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur.

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Abstract

In this paper, the Schottky behavior of Pt contact on n- GaN grown by RF-plasma assisted molecular beam epitaxy was investigated under different annealing temperatures.

Item Type:Conference or Workshop Item (Paper)
Subjects:Q Science > QC Physics > QC1 Physics (General)
ID Code:14832
Deposited By:Mr Erwan Roslan
Deposited On:20 Nov 2009 10:39
Last Modified:20 Nov 2009 10:39

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