C, W Chin and Hassan, Z and F, K Yam (2007) Effects Of Thermal Annealing Of Pt Schottky Contacts On n-GaN. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur.
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Abstract
In this paper, the Schottky behavior of Pt contact on n- GaN grown by RF-plasma assisted molecular beam epitaxy was investigated under different annealing temperatures.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | Q Science > QC Physics > QC1 Physics (General) |
| Divisions: | Pusat Pengajian Sains Fizik (School of Physics) |
| Depositing User: | Mr Erwan Roslan |
| Date Deposited: | 20 Nov 2009 02:39 |
| Last Modified: | 13 Jul 2013 05:45 |
| URI: | http://eprints.usm.my/id/eprint/14832 |
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