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Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.

L, S Chuah and Hassan, Z and Abu Hassan, H (2007) Red Emission Of Thin Film Electroluminescent Device Based On p-GaN. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur.

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Abstract

High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE).

Item Type:Conference or Workshop Item (Paper)
Subjects:Q Science > QC Physics > QC1 Physics (General)
ID Code:14830
Deposited By:Mr Erwan Roslan
Deposited On:20 Nov 2009 10:10
Last Modified:20 Nov 2009 10:10

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