Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.

L, S Chuah and Hassan, Z and Abu Hassan, H (2007) Red Emission Of Thin Film Electroluminescent Device Based On p-GaN. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur.

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    Abstract

    High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE).

    Item Type: Conference or Workshop Item (Paper)
    Subjects: Q Science > QC Physics > QC1 Physics (General)
    Divisions: Pusat Pengajian Sains Fizik (School of Physics)
    Depositing User: Mr Erwan Roslan
    Date Deposited: 20 Nov 2009 10:10
    Last Modified: 13 Jul 2013 13:45
    URI: http://eprints.usm.my/id/eprint/14830

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