The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.

C, W Chin and Hassan, Z. and F, K Yam (2007) The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur.

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Abstract

In this paper, we present the study of the electrical, structural and optical properties of p-type GaN grown on sapphire by RF plasma-assisted molecular beam epitaxy (RF-MBE).

Item Type:	Conference or Workshop Item (Paper)
Subjects:	Q Science > QC Physics > QC1 Physics (General)
Divisions:	Pusat Pengajian Sains Fizik (School of Physics)
Depositing User:	Mr Erwan Roslan
Date Deposited:	20 Nov 2009 00:39
Last Modified:	13 Jul 2013 05:44
URI:	http://eprints.usm.my/id/eprint/14827

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