Development Of Si02 Thin Film On Singlecrystal Sic By Anodic Oxidation Technique.

Cheong, Ir. Dr., Kuan Yew and Purwadaria, Dr. Sunara and Lockman, Dr. Zainovia (2008) Development Of Si02 Thin Film On Singlecrystal Sic By Anodic Oxidation Technique. Project Report. Universiti Sains Malaysia.

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    Abstract

    Anodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm. Filem nipis Si02 tersadur anod telah ditumbuhkankan di atas substrat silikon (Si) jenis p dan n serta silikon karbida jenis-p dengan ketebalan dalam julat 50-130.

    Item Type: Monograph (Project Report)
    Subjects: T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
    Divisions: Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral (School of Material & Mineral Resource Engineering)
    Depositing User: Mr Erwan Roslan
    Date Deposited: 20 May 2009 10:05
    Last Modified: 13 Jul 2013 12:20
    URI: http://eprints.usm.my/id/eprint/10152

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