Items where Author is "Ng, S. S. "

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Number of items: 8.

Article

Amirhoseiny, M. and Hassan, Z. and Ng, S. S. and Ahmad, M. A. (2011) Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering. Journal of Nanomaterials, 2011 (579427). pp. 1-7. ISSN 1687-4110

Conference or Workshop Item

Osman, S. A. and Ng, S. S. and Hassan, Z. (2019) Reactive Sputtering Growth Of Indium Nitride Thin Films On Flexible Substrate Under Different Substrate Temperatures. In: International Conference On Semiconductor Materials Technology.

Lee, H. S. and Ng, S. S. and Yam, F. K. (2017) Effects of Nitrogen Gas on the Growth of Magnesium Doped Indium Nitride Thin Films via Sol-gen Spin Coating Method. In: 6th International Conference on Solid State Science & Technology and Workshop on Advanced Materials Technology: Growth & Characterization.

Tan, A. L. and Ng, S. S. and Hassan, H. Abu (2017) Influence Of Initial Sulfur Content In Precursor Solution For The Growth Of Molybdenum Disulfide. In: International Seminar on Mathematics and Physics in Sciences and Technology 2017 (ISMAP 2017).

Lee, H. S. and Ng, S. S. and Yam, F. K. (2017) Effect of Nitrogen Gas on the Growth of Magnesium Doped Indium Nitride Thin Films via Sol-gel Spin Coating Method. In: The International Conference of Solid State Science and Technology (ICSSST 2017).

Tan, A. L. and Ng, S. S. and Hassan, H. Abu (2017) Influence of Oxalic Acid Concentrations on The Growth of Molybdenum Disulfide via Spin Coating Technique. In: The International Conference of Solid State Science and Technology (ICSSST 2017).

Tan, A. L. and Ng, S. S. and Hassan, H. Abu (2017) Influence of initial sulfur content in precursor solution for the growth of molybdenum disulfide. In: ISMAP 2017.

Ooi, P. K. and Ng, S. S. and Abdullah, M. J. (2015) Characteristics of p-Cu20/n-GaN Heterojunction Prepared via Reactive Radio Frequency Magnetron Sputtering. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015).

This list was generated on Fri Mar 29 17:04:02 2024 +08.
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