Thermal Stability And Iv Characteristics Of In-Situ Epitaxial Al On GaAs P-HEMT Grown By Solid Source MBE.

Abstract

The fabrication and characterisation of AIGaAs/lnGaAs/GaAs pseudomorphic-HEMT (pHEMT) with in-situ deposited epitaxial aluminium gate by MBE is reported. A simpler technique of fabricating HEMT without the inherent problem associated with gate recess is described. Its advantages over conventional method of fabricating HEMT are also shown. The near ideal epitaxial-AI/AIGaAs Schottky barrier contact is exploited in this work, resulting to an excellent I-V and thermal treatment characteristics. This epitaxial AI diodes have better ideality factor, higher barrier height and higher breakdown voltage but high series resistance than that of Au diodes.