Thermal Stability And Iv Characteristics Of In-Situ Epitaxial Al On GaAs P-HEMT Grown By Solid Source MBE.

Abdul Aziz, Azlan (2006) Thermal Stability And Iv Characteristics Of In-Situ Epitaxial Al On GaAs P-HEMT Grown By Solid Source MBE. Working Paper. Universiti Sains Malaysia.

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    Abstract

    The fabrication and characterisation of AIGaAs/lnGaAs/GaAs pseudomorphic-HEMT (pHEMT) with in-situ deposited epitaxial aluminium gate by MBE is reported. A simpler technique of fabricating HEMT without the inherent problem associated with gate recess is described. Its advantages over conventional method of fabricating HEMT are also shown. The near ideal epitaxial-AI/AIGaAs Schottky barrier contact is exploited in this work, resulting to an excellent I-V and thermal treatment characteristics. This epitaxial AI diodes have better ideality factor, higher barrier height and higher breakdown voltage but high series resistance than that of Au diodes.

    Item Type: Monograph (Working Paper)
    Subjects: Q Science > QC Physics > QC1 Physics (General)
    Divisions: Pusat Pengajian Sains Fizik (School of Physics)
    Depositing User: ARKM Al Rashid Automasi
    Date Deposited: 13 May 2009 13:30
    Last Modified: 13 Jul 2013 12:17
    URI: http://eprints.usm.my/id/eprint/9961

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