Electrical Characteristics Of Gan-Based Metal-Oxide-Semiconductor (MOS) Structures.

Abdullah, K. A. and Abdullah, M. J. and F., K. Yam and Hassan, Z. Electrical Characteristics Of Gan-Based Metal-Oxide-Semiconductor (MOS) Structures. Working Paper. Universiti Sains Malaysia.

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    Abstract

    Gallium nitride (Gan) has attracted considerable interest for electronic device applications at high temperature environment with high power conditions. The large lattice mismatch and the large thermal expansion coefficient difference between the Gan film and silicon substrate makes it difficult to get film of high quality and suitable for the metal-oxide-semiconductor (Mas) devices.

    Item Type: Monograph (Working Paper)
    Subjects: Q Science > QC Physics > QC1 Physics (General)
    Divisions: Pusat Pengajian Sains Fizik (School of Physics)
    Depositing User: Mr Erwan Roslan
    Date Deposited: 20 Aug 2009 15:18
    Last Modified: 13 Jul 2013 12:48
    URI: http://eprints.usm.my/id/eprint/11822

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