Characteristics Of Low- Termperature-Grown Gan Films On Si(111) Substrates.
Hassan, Z and G., L. Chew and F., K. Yam and K, Ibrahim and Kordesch, M. E and P. C., Colter Characteristics Of Low- Termperature-Grown Gan Films On Si(111) Substrates. Working Paper. Universiti Sains Malaysia .
Gallium nitride (GaN)-based materials have been the subject of intensive research recently for blue and ultraviolet light emission and high temperature/high power electronic devices. Current research activities are mainly focused on epitaxial GaN films grown on sapphire at high temperatures (about lOOO°C) for these applications. Silicon is a potential alternative to sapphire as a substrate due to its low cost, high quality and wide availability as well as easy integration with the current silicon technology.
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