Characteristics Of Low- Termperature-Grown Gan Films On Si(111) Substrates.

Abstract

Gallium nitride (GaN)-based materials have been the subject of intensive research recently for blue and ultraviolet light emission and high temperature/high power electronic devices. Current research activities are mainly focused on epitaxial GaN films grown on sapphire at high temperatures (about lOOO°C) for these applications. Silicon is a potential alternative to sapphire as a substrate due to its low cost, high quality and wide availability as well as easy integration with the current silicon technology.