Characteristics Of Low- Termperature-Grown Gan Films On Si(111) Substrates.

Hassan, Z and G., L. Chew and F., K. Yam and K, Ibrahim and Kordesch, M. E and P. C., Colter Characteristics Of Low- Termperature-Grown Gan Films On Si(111) Substrates. Working Paper. Universiti Sains Malaysia .

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    Abstract

    Gallium nitride (GaN)-based materials have been the subject of intensive research recently for blue and ultraviolet light emission and high temperature/high power electronic devices. Current research activities are mainly focused on epitaxial GaN films grown on sapphire at high temperatures (about lOOO°C) for these applications. Silicon is a potential alternative to sapphire as a substrate due to its low cost, high quality and wide availability as well as easy integration with the current silicon technology.

    Item Type: Monograph (Working Paper)
    Subjects: Q Science > QC Physics > QC1-999 Physics
    Divisions: Pusat Pengajian Sains Fizik (School of Physics)
    Depositing User: Mr Erwan Roslan
    Date Deposited: 30 Jun 2009 15:45
    Last Modified: 13 Jul 2013 12:30
    URI: http://eprints.usm.my/id/eprint/10775

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