Investigation Of Charge Conduction Mechanisms In Dielectric Based On Widebandgap Semiconductor.

Cheong , Dr.Kuan Yew and Hassan, Dr. Zainuriah and Aziz, Assoc. Prof. Dr. Azizan and Lockman, Dr. Zainovia and Tin , Prof. Chin Che and Assoc. Prof. Dr. Rusli, Assoc. Prof. Dr. Rusli (2008) Investigation Of Charge Conduction Mechanisms In Dielectric Based On Widebandgap Semiconductor. Project Report. Universiti Sains Malaysia.

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Abstract

Result of the work have been presented in three major parts in this report : (1) effects of thermal nitride gate –oxide thickness and post grown annealing on 4H SiC- based metal-oxide-semiconductor characteristics, (2) MOS characteristics of diluted N20 grown Si02 gate on 4H-SiC, and (3) MaS characteristics of sol-gel derived Si02 gate on GaN.

Item Type:	Monograph (Project Report)
Subjects:	T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
ID Code:	10415
Deposited By:	Mr Erwan Roslan
Deposited On:	05 Jun 2009 09:40
Last Modified:	05 Jun 2009 10:45

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