Investigation Of Charge Conduction Mechanisms In Dielectric Based On Widebandgap Semiconductor.
Cheong , Dr.Kuan Yew and Hassan, Dr. Zainuriah and Aziz, Assoc. Prof. Dr. Azizan and Lockman, Dr. Zainovia and Tin , Prof. Chin Che and Assoc. Prof. Dr. Rusli, Assoc. Prof. Dr. Rusli (2008) Investigation Of Charge Conduction Mechanisms In Dielectric Based On Widebandgap Semiconductor. Project Report. Universiti Sains Malaysia.
Result of the work have been presented in three major parts in this report : (1) effects of thermal nitride gate –oxide thickness and post grown annealing on 4H SiC- based metal-oxide-semiconductor characteristics, (2) MOS characteristics of diluted N20 grown Si02 gate on 4H-SiC, and (3) MaS characteristics of sol-gel derived Si02 gate on GaN.
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