Investigation Of Charge Conduction Mechanisms In Dielectric Based On Widebandgap Semiconductor.

Cheong, Dr.Kuan Yew and Hassan, Dr. Zainuriah and Aziz, Assoc. Prof. Dr. Azizan and Lockman, Dr. Zainovia and Tin, Prof. Chin Che and Assoc. Prof. Dr. Rusli, Assoc. Prof. Dr. Rusli (2008) Investigation Of Charge Conduction Mechanisms In Dielectric Based On Widebandgap Semiconductor. Project Report. Universiti Sains Malaysia.

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    Abstract

    Result of the work have been presented in three major parts in this report : (1) effects of thermal nitride gate –oxide thickness and post grown annealing on 4H SiC- based metal-oxide-semiconductor characteristics, (2) MOS characteristics of diluted N20 grown Si02 gate on 4H-SiC, and (3) MaS characteristics of sol-gel derived Si02 gate on GaN.

    Item Type: Monograph (Project Report)
    Subjects: T Technology > TN Mining Engineering. Metallurgy > TN1-997 Mining engineering. Metallurgy
    Divisions: Kampus Kejuruteraan (Engineering Campus) > Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral (School of Material & Mineral Resource Engineering)
    Depositing User: Mr Erwan Roslan
    Date Deposited: 05 Jun 2009 09:40
    Last Modified: 13 Jul 2013 12:24
    URI: http://eprints.usm.my/id/eprint/10415

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